Let us suppose we want to simulate a FET with the channel composed by bilayer graphene, and with the same geometry as that described in the previous tutorial.
The script is actually the same: we have only to pay attention in defining the bilayer graphene instead of graphene, and, if we want to consider the same thickness for the top oxide, the grid along the x direction must end at 10.35 nm, since 0.35 is the inter-layer distance as set by default (acc_tp member of the bilayer_graphene class).
With respect to the previous script, the only changes are highlighted in red.
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from NanoTCAD_ViDES import *
rank = MPI.COMM_WORLD.Get_rank()
# I create the grid
xg=nonuniformgrid(array([-10,1,0,0.05,10.35,1]))
BG=bilayer_graphene(50);
acc=0.144;
kF=2*pi/(3*sqrt(3)*acc);
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