The following tutorial compute the transfer characteristics, the charge density and the potential in correspondence of graphene in a double gate FET through the top-of-the-barrier model.
Top and bottom oxides are supposed to be 0.5 nm thick and made of SiO2.
We first set the top and bottom capacitance
and we set Vds=1.5 V.
We then create the tuple to store the main electrical quantities
We set the minimum Vg1 to -5V and the delta Vg equal to 0.01 V
We now initialize the top-of-the-barrier graphene class
Let’s then sweep Vgs up to 5V, and impose Vg2 equal to Vg1.
At each step, the method charge_I return the potential in the graphene (Phi_c), the current (curr) and the charge in graphene (charge), which are then stored in the corresponding tuples, defined before.
Let’s then store all the information in three different files, which can then be plotted with gnuplot.
The complete script can be found here.