# Tutorial 07: Schottky GNR-FET

 In this tutorial we will perform self-consistent simulations of a double gate GNR-FET with Schottky contacts. The top and bottom oxide-thicknesses are 2 nm (tox1 and tox2),  the lateral spacing S is equal to 1nm. The GNR is 6 arm-chair and the channel L is 15 nm long. The commands are the same as in the previous tutorials, with the only difference that Schottky contacts have to be specified, by means of the command GNR.contact=”Schottky” Pay also attention, that mode space has not yet been implemented for GNR devices, so that the GNR.modes=”yes” has no effect Here the complete script from NanoTCAD_ViDES import * # The width of the nanoribbon is 1.37 nm, and it is 15 nm long GNR=nanoribbon(6,15); # I create the grid xg=nonuniformgrid(array([-2,0.3,0,0.2,2,0.3])) yg=nonuniformgrid(array([-1,0.3,0,0.2,1.37,0.2,2.37,0.3])); grid=grid3D(xg,yg,GNR.z,GNR.x,GNR.y,GNR.z); # I define Schottky contacts GNR.contact=”Schottky” # Now I define the gate regions top_gate=gate(“hex”,grid.xmax,grid.xmax,grid.ymin,grid.ymax,grid.zmin,grid.zmax) bottom_gate=gate(“hex”,grid.xmin,grid.xmin,grid.ymin,grid.ymax,grid.zmin,grid.zmax) top_gate.Ef=-0.3; bottom_gate.Ef=-0.3; GNR.mu2=-0.2 # I take care of the solid SiO2=region(“hex”,-2,2,-2,2,grid.zmin,grid.zmax); SiO2.eps=3.9; p=interface3D(grid,top_gate,bottom_gate,SiO2); p.normpoisson=1e-3; solve_Poisson(grid,p) p.normpoisson=1e-1; p.normd=5e-2; solve_self_consistent(grid,p,GNR); plot(GNR.E,GNR.T) show() download script