In this tutorial we will perform self-consistent simulations of a double gate GNR-FET with Schottky contacts.
The top and bottom oxide-thicknesses are 2 nm (tox1 and tox2), the lateral spacing S is equal to 1nm.
The GNR is 6 arm-chair and the channel L is 15 nm long.
The commands are the same as in the previous tutorials, with the only difference that Schottky contacts
have to be specified, by means of the command
Pay also attention, that mode space has not yet been implemented for GNR devices, so that the GNR.modes=”yes” has
Here the complete script
from NanoTCAD_ViDES import *
# The width of the nanoribbon is 1.37 nm, and it is 15 nm long
# I create the grid
# I define Schottky contacts
# Now I define the gate regions
# I take care of the solid