made with NanoTCAD ViDES results
Beside the newest articles, you can find a link to a tarball file containing the Figures (xmgrace files including also raw data) as well as the code scripts used to generate results
P. Marconcini, A. Cresti, F. Triozon, G. Fiori, B. Biel, Y-M Niquet, M. Macucci, S. Roche “Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics “, ACS Nano, Vol. 6, pp. 7942–7947, 2012.
E. Prati, M. De Michielis, M. Belli, S. Cocco, M. Fanciulli, D. Kotekar-Patil, M. Ruoff, D. P Kern, D. A. Wharam, J. Verduijn, “Few electron limit of n-type metal oxide semiconductor single electron transistors”, Nanotechnology, Vol. 23, p. 215204, 2012.
I. Deretzis, G. Fiori, G. Iannaccone, G. Piccitto, A. La Magna, “Quantum Transport modeling of defected graphene nanoribbons”, Physica E- Low Dimensional Systems and Nanostructures, Vol. 44, pp. 981-984, 2012.
G. Fiori, A. Betti, S. Bruzzone, G. Iannaccone, “Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistors “, ACS Nano, Vol. 6, pp. 2642-2648, 2012. [link to Figures, raw data and scripts]
B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, H. Kurz, “Current saturation and voltage gain in bilayer graphene field effect transistors “, Nano Letters, Vol. 12, pp.1324−1328, 2012. [link to Figures, raw data and scripts]
G. Iannaccone, G. Fiori, A. Betti, “Noise in graphene and carbon nanotube devices”, 21st International conference on Noise and Fluctuations (ICNF), pp.360-363, Toronto Canada, 2011
G.Fiori, A.Betti, S.Bruzzone, P.D’Amico, G.Iannaccone, ” Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio “, IEDM 2011, 5-7 December, Washington D.C., USA.
G. Fiori “Negative Differential Resistance in mono and bilayer graphene p-n junctions”, IEEE Electr. Dev. Lett., Vol 32, pp. 1334-1336, 2011.
A. Betti, G. Fiori, G. Iannaccone “Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons “,IEEE Trans. Electr. Dev., Vol. 58, pp. 2824-2830, 2011.
A. Betti, G. Fiori, G. Iannaccone “Strong degradation in ideal graphene nanoribbon due to phonon scattering”, Appl. Phys. Lett., Vol 98, p 212111, 2011.
A. Zukowski, X. Yang, K. Mohanram, “Universal logic modules based on carbon-nanotube transistors”, Proceedings of DAC’11, ISBN: 978-1-4503-0636-2 doi>10.1145/2024724.2024921
A. Betti, G. Fiori, G. Iannaccone, “Statistical theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction”, Phys. Rev. B, Vol. 81, p. 035329, 2010.
I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna, “Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies”, Phys. Rev. B, Vol. 81, p. 085427, 2010.
I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna, “Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions “, Phys. Rev. B, 82, 161613(R), 2010
G.Fiori, S. Lebegue, A.Betti, P. Michetti, M. Klintenberg, O. Eriksson, and G. Iannaccone “Simulation of hydrogenated graphene field-effect transistors through a multiscale approach “, Phys. Rev. B, Vol. 82, p. 153404, 2010.
X. Yang, G. Fiori, G. Iannaccone, K. Mohanram, “Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors”, GLSVLSI 2010, May 16-18, Providence, Rhode Island, USA.
I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna, “Quantum transport modeling of Schottky junctions between metallic contacts and pure/defected graphene nanoribbons”, E-MRS 2010 Symposium, 7-11 June, Strasbourg, France.
A. Betti, G. Fiori, G. Iannaccone, ” Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction “, IWCE 20010, 26-29 October 2010, Pisa, Italy.
G. Fiori, S. Lebegue, A.Betti, P. Michetti, M. Klintenberg, O. Eriksson, G. Iannaccone, “A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors “, IWCE 20010, 26-29 October 2010, Pisa, Italy.
A. Betti, G. Fiori, G. Iannaccone, ” Full band assessment of Phonon-limited mobility in graphene nanoribbons “, IEDM 20010, 6-8 December, San Francisco, USA.
Larkhoon Leem, Ashutosh Srivastava, Shuang Li, Blanka Magyari-Kope, Giuseppe Iannaccone, James S. Harris, Gianluca Fiori, ” Multi-scale Simulations of Partially Unzipped CNT Hetero-junction Tunneling Field Effect Transistor “, IEDM 20010, 6-8 December, San Francisco, USA.
F. Karimi, M. Fathipour, H. Ghanatian and V. Fathipour, “A Comparison Study of Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire Transistors”, World Academy of Science, Engineering and Technology 69 2010, pp.463-466.
G. Fiori, G. Iannaccone, “On the possibility of tunable-gap bilayer graphene FET”, IEEE Electron Device Letters, Vol. 30, pp. 261-264, 2009.
A. Betti, G. Fiori, G. Iannaccone, “Shot noise suppression in quasi-one-dimensional Field Effect Transistors”, IEEE Transaction on Electron Devices, Vol. 56, pp. 2137-2143, 2009.
G. Fiori, G. Iannaccone, “Ultralow-Voltage Bilayer graphene tunnel FET”, IEEE Electron Device Letters, Vol. 30, pp.1096-1098, 2009.
M. Cheli, G. Fiori, G. Iannaccone, “A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor”, IEEE Trans. Electr. Dev., Vol. 56, pp. 2979-2986, 2009.
A. Betti, G. Fiori, G. Iannaccone, “Enhanced shot noise in carbon nanotube field-effect transistors”, Appl. Phys. Lett., Vol. 95, p. 252108, 2009.
P. Marconcini, G. Fiori, A. Ferretti, G. Iannaccone, M. Macucci, “Numerical Analysis of transport properties of boron-doped graphene FETs”, IWCE-13, pp. 85-88, Beijing, 2009.
G. Fiori, A., G. Iannaccone, “Performance analysis of graphene bilayer transistors through tight-binding simulations”, IWCE-13, pp. 301-304, Beijing, 2009.
A. Betti, G. Fiori, G. Iannaccone, “Shot noise analysis in quasi one-dimensional field effect transistors”, International Conference on Noise and Fluctuations, pp. 581-584, Pisa, 2009.
A. Betti, G. Fiori, G. Iannaccone, “Physical insights on graphene nanoribbon mobility through atomistic simulations”, IEDM 2009, 5-7 December, Baltimore, USA.
Y. Yoon, G. Fiori, S. Hong, J. Guo and G. Iannaccone, “Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs”, IEEE Transaction on Electron Devices, Vol. 55, pp. 2314-2323, 2008.
P. Marconcini, G. Fiori, M. Macucci, G. Iannaccone, “Hierarchical simulation of transport in silicon nanowire transistors”, Journal of Computational Electronics, Vol. 7, pp. 415-418, 2008.
G. Fiori, S. Di Pascoli, G. Iannaccone, “Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs”, Journal of Computational and Theoretical Nanoscience, Vol. 5, pp. 1115-1119, 2008.
G. Fiori, G. Iannaccone, G. Klimeck, “Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors”, IEEE Transaction on Nanotechnology, Vol.6, Issue 4, pp. 475-480, 2007
G. Fiori, G. Iannaccone, “Simulation of Graphene Nanoribbon Field-Effect Transistors”,
IEEE, Electron Device Letters, Vol. 28, Issue 8, pp. 760 – 762, 2007
G. Fiori, G. Iannaccone, “Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors”, IEEE TRANSACTIONS ON NANOTECHNOLOGY,vol. 6,pp 524-529,2007
S. Poli, G. Fiori, S. Reggiani, A. Gnudi, G.Iannaccone “Tight-binding versus effective-mass modeling of carbon nanotube FETs”, Proceeding of the 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 15-16 March 2007, pp. 43-46, 2007.
G. Fiori, Y. Yoon, S. Hong, G. Iannaccone, J. Guo, “Performance comparison of graphene nanoribbon schottky barrier and MOS FETs”, International Electron Device Meeting, pp 757-760, Washington,2007.