New NanoTCAD ViDES Forum

A new forum for discussion has been created at the following link.

You need to join the forum, in order to take part to it.


Please note that this is meant to trigger discussion on the code among the whole community.

The bottom line is: anyone can (must) CONTRIBUTE in solving issues raised in the forum, not only NanoTCAD ViDES developers.

Have fun!


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Advertising your published papers based on NanoTCAD ViDES results

A message to NanoTCAD ViDES Users:

As you may see ( we have recently reach a huge goal, with more than 115 papers published using results exploited through NanoTCAD ViDES!

In order to let you advertise your research among the NanoTCAD ViDES community and to keep track of the research going on, please do not forget to put a sentence in the article referencing to the code (e.g., “Results have been obtained through the open-source NanoTCAD ViDES code” and reference to the website, i.e.,, as advised in the reference section of the website (

So, it would be great if, once published, you could send the bibliographic information of your article,  so that we can include it in the list.

In case, you have already published your research on a journal/conference, but you cannot find it in the list, send us the reference and we will include it.

Many thanks!

Gianluca Fiori




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New version of fplot

A new version of the utility fplot has been released, where some bugs have been fixed. The new version can be found at the following link:


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Release of version 1.5 of the code

Dear NanoTCAD ViDES Users,

today we have released the new version of the code (v1.5).

In particular:

  • A top-of-the-barrier model for graphene FET has been released together with a new tutorial (Tutorial 20).
  • Bug fixed in CNT mode space approach (with number of modes smaller than the number of atoms on each ring).
  • Bug fixed in the create_H_from_xyz command.
  • Improved speed for the solution of 2D Poisson equation.

Have fun!


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Quick-start video on vIDEs

A new video on how-to-use the vIDEs GUI has been released and can be found here:

Have fun!

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NanoTCAD ViDES tutorial @ Graphene 2016 conference in Genoa

Within the GRAPHENE 2016 conference in Genoa, a satellite TUTORIAL will be delivered on MONDAY April 18, on Multi-scale simulation of two-dimensional materials based devices.

The registration is online on the GRAPHENE 2016 website and a detailed description of the event can be found here and below.


TUTORIAL on Multi-scale simulation of two-dimensional materials based devices

Gianluca Fiori and Giuseppe Iannaccone University of Pisa, Italy

MONDAY APRIL 18 : 14h-18h (coffee break included) Location: Porto Antico di Genova Centro Congressi Additional fees: 25€

Description: 2D-material (2DM) technology is considered an enabling technology for new applications in electronics. However, due its embryonic stage, many fabrication issues still remain unsolved, and a comprehensive analysis of the real performance to be expected in 2DM-based devices is lacking. From this perspective, simulations are actually the only available tool able to guide and inform progress in the field.

In this tutorial, we will focus on the approaches and methods needed to simulate devices based on 2D-materials, which enable an assessment of the expected performance against Industry requirements.

We will first provide an overview of state-of-the-art devices based on 2D materials, ranging from digital (high-performance and low-power devices), to analog (i.e., radio frequency applications) as well as opto-electronics applications. We will then discuss the physical models suitable to describe the electrical behavior of 2D-devices (e.g., classical and quantum transport models).

Finally, we will propose some simple simulations to be run by means of the open-source NanoTCAD ViDES code


  1. 1)  State of the art of Electron devices based on 2D materials
  2. 2)  Modeling of devices based on 2D materials:
    1. Semiclassical models
    2. Quantum transport models: the NEGF approach
  3. 3)  Assessment of device performance through device modeling
  4. 4)  Simulations of 2D-materials through the NanoTCAD ViDES code.




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NanoTCAD ViDES XMAS gift — fplot: a visual tool to post-process ViDES data

Dear NanoTCAD ViDES Users,

we are providing a new tool for the post-processing of the data generated by the NanoTCAD ViDES simulator. All the info regarding the new tool can be found in the new utility section of the website:

Have fun with NV!



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E-MRS Symposium Z on 2D materials

Symposium Z: Two-dimensional crystals and van der Waals heterostructures for nanoelectronics

organized by A. Molle (CNR-IMM, Italy), C. Casiraghi (Univ. Manchester, UK), A. Castellanos-Gomez (IMDEA, Spain), G. Fiori (Univ. Pisa, Italy)
at the next E-MRS 2016 Spring Meeting – Lille (France), May 2016, 2-6

Submission Deadline    January 15th, 2016
submission at

Scope        Starting from the relatively recent rise of graphene, the family of two dimensional (2D) materials is rapidly expanding not only by including
new elements and compounds, but also by paving the way to new functionalities and applications.
Novel methods for the synthesis and functionalization are demanding to foster the 2D materials evolution,
which will be the platform for future enabling technologies.

Hot Topics    The Symposium Z is intended to highlight the most recent advances on 2D materials and their applications.
A large variety of 2D atomic crystals isolated in the recent years offers a rich platform for the creation of heterostructures,
which combine several of these materials in one stack. Among the topics that will be covered in the Symposium one can highlight:
•  Synthesis, characterization and structural controls of 2D materials (mostly transition metal dichalchogenides) and 2D van der Waals heterostructures
•  Electronic and spin transport in 2D materials
•  Novel 2D honeycomb materials: silicene, germanene, stanene, phosphorene
•  Electronic, magnetic, optical properties of 2D materials
•  Thermoelectrics, straintronics, and valleytronics in 2D materials
•  2D Materials for energy harvesting and photonics
•  2D Materials for sensor and MEMS devices
•  2D materials for Post-Si and III-V technology: Digital, Analog (RF) and flexible electronic applications
•  Advanced characterization for 2D materials

Joint sessions with the parallel Symposium “Graphene and Related Materials: from Fundamental Science to Applications”
will be eventually taken into account. Selected oral contribution(s) can be upgraded to invited talks.

A Special Issue of the Symposium Z proceedings will be published in Physica Status Solidi – Rapid Research Letters (Wiley)
upon peer-reviewed submission open to all the symposium contributors.
Upon courtesy of Wiley, a limited number of selected papers may be upgraded for publication in Advanced Electronic Materials (Wiley).

a) Graduate Student Awards (GSA) in recognition of academic achievement and research excellence
(see for details);
b) Poster Award(s) sponsored by Wiley.

Invited Speakers: R. Gorbachev (Univ. of Manchester, UK), M. Chhowalla (Rutgers Univ., USA), J. Coleman (Trinity College, Ireland),
A. Kis (EPFL, Switzerland), D. Akinwande (Univ. Texas, USA), M. Houssa (KU Leuven, BE), S. Roche (Unicat, Spain), E. Pop (Stanford Univ., USA),
F. Koppens
(ICFO, Spain), M. Lemme (Siegen Univ., Germany), J. Garrido (Walter Schottky Institute and Munich Univ., Germany),
F. Schwierz
(Univ. of Illmenau, Germany), D. Neumaier (AMO, Germany), M. Ugeda (CIC Nanogune, Spain), H. Zhang (Nanyang Technol. Univ., Singapore).

More info at:

The Symposium Z Organizers

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New tutorial on multi-scale simulations of Si Nanowire Transistor

f3 f1







A new tutorial on Silicon Nanowire Transistor based on multi-scale simulations has been released and can be found here:

The approach is based on DFT calculations of the bands through Quantum Espresso, the calculation of the tight-binding like by means of
Wannier 90 and transport calculations through NanoTCAD ViDES.

The provided script has eventually led to the following publication:

Y. Lv, H. Wang, S. Chang, J. He, and Q. Huang, “Band Structure Effects in Extremely Scaled Silicon Nanowire MOSFETs With Different Cross Section Shape,” Electron Devices, IEEE Transactions on, vol. PP, no. 99, pp. 1-1, 2015.

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Tutorial on Silicene Nanoribbon

A new tutorial on Silicene Nanoribbon field effect transistor has been created and can be found here:

Have fun!



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