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BREAKING NEWS:  A Beta version of the IDE with integrated GUI (vIDEs) is now available here.

Welcome to the website of the new version of the NanoTCAD ViDES code, which levers on the versatility of the python scripting, and on the strength of the C/Fortran languages. The current version of NanoTCAD ViDES is a python module, which integrates the C and Fortran subroutines already developed in the past version of the NanoTCAD ViDES simulator, which is able to simulate nanoscale devices, through the self-consistent solution of the Poisson and the Schroedinger equations, by means of the Non-Equilibrium Green’s Function (NEGF) formalism.

The module developed so far has a set of predefined functions, which allow to compute transport in:

  • Two-dimensional materials (2D materials like MoS2, WSe2 and metal dichalcogenides in generals)
  • Silicene
  • Graphene Nanoribbons
  • Carbon Nanotubes
  • Two-dimensional graphene FET
  • Two-dimensional bilayer graphene FET

The user can anyway define his own device and material through the exploitation of the Hamiltonian command, which allows to define whatever material within the tight-binding approach. Services on demand are available. Please refer to the service section for further information.

The code is highly modularized, so that additional modules can be easily added, following the tips and the explanations provided in the “Developing Modules” session.

The site is organized as follows:
The Download and Installation sections contains the source code as well as all the information to install the code and the needed additional modules.
 In the Documentation section you can find information regarding
  1. the Commands available in the released version of the code.
  2. the Tutorial, which introduces the user to the NanoTCAD ViDES simulator, providing examples and scripts, which can be downloaded.
For a description of the physical models implemented in the code, please refer to the publications you can find here.
For a complete documentation of all python releases please, click here.
while documentation on numpy can be found here

You can sign up here to our newsletter dedicated to NanoTCAD ViDES, with release updates and news on research results. The old version can still be found here. NanoTCAD ViDES around the world!

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Examples of NanoTCAD ViDES applications

Transmission through a defected nanoribbon

In NanoTCAD ViDES you can easily compute the transmission in a defected graphene nanoribbon as the one shown here:

ViDESbig_logo   Refer to the video tutorial for more info. Such a structure can be easily generalized to graphene anti-dot system. The script to obtain the results shown above, the script for the interpolation and the patch for the NanoTCAD ViDES module in order to correctly compute the charge in the defected nanoribbon can be found here.

Bi2Se3 Tunnel FET transistor

NanoTCAD ViDES can compute transport in a self-consistent way through novel materials-based transistors. Recently, the code has been successfully exploited in the evaluation of the performance of tunnel FET transistors with channel made of the topological insulator Bi2Se3 [Q. Zhang et al., IEEE Electron Device Letters, Vol. 35, p. 129, 2014].

Vertical Graphene-based transistors

Vertical transport through stacked graphene/hBN/graphene is one of the key topic investigated through the research community. Such structures can be easily considered within the NanoTCAD ViDES framework, as demonstrated by the simulations shown below [G. Fiori et al., “Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors “, IEEE Trans. Electr. Dev., Vol. 60, pp.268-273, 2013].


Lateral Graphene-based transistors

Lateral graphene based transistors represent a promising option in graphene technology in order to obtain large Ion/Ioff ratio, with reduced sub-threshold swing, while complying with ITRS requirements [G. Fiori, A. Betti, S. Bruzzone, G. Iannaccone, “Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistors “, ACS Nano, Vol. 6, pp. 2642-2648, 2012.]. The structure as well as the LDOS of the considered devices are shown below.

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